Behavior of monolayer holes on MBE grown GaAs surfaces during annealing revealed by in situ scanning electron microscopy

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 88-91

  Inoue, N ^a   Homma, Y ^b   Osaka, J ^b   Araki, T ^a  

^a Osaka Prefecture University   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; COALESCENCE; ELECTRON BEAMS; EVAPORATION; IMAGING TECHNIQUES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SHRINKAGE; SUBSTRATES; SURFACES;

ELECTRON BEAM GLANCING ANGLE; HOLES ANNIHILATION; ISLANDS; MONOLAYER DEEP HOLES;

MOLECULAR BEAM EPITAXY;

EID: 0030191017     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01064-5     Document Type: Article

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