Optical in situ observation of electron beam induced surface modification of epitaxial fluoride films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 5 A, 1997, Pages 2822-2828

  Kawasaki, Koji ^a   Tomisaka, Manabu ^a,b   Tsutsui, Kazuo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

Ca aggregation; CaF2; Electron beam; GaAs; Heteroepitaxy; In situ observation; P adsorption; Si; SPA; Surface modification

Indexed keywords

ELECTRON IRRADIATION; HETEROEPITAXY; SURFACE PHOTOABSORPTION (SPA);

ADSORPTION; CALCIUM COMPOUNDS; ELECTRON BEAMS; EPITAXIAL GROWTH; FILM GROWTH; FLUORINE COMPOUNDS; LIGHT ABSORPTION; LIGHT REFLECTION; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SURFACE TREATMENT;

SEMICONDUCTING FILMS;

EID: 0031140453     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2822     Document Type: Article

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