Effects of electron beam exposure conditions on the surface modification of CaF2 (111) for heteroepitaxy of GaAs/CaF2 structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 3, 1996, Pages 1701-1705

  Hwang, Sang Man ^a   Miyasato, Keiichiro ^a   Kawasaki, Koji ^a   Tsutsui, Kazuo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electron beam; F vacancy; GaAs CaF2 Si(111); Heteroepitaxy; Surface modification

Indexed keywords

ADSORPTION; CALCIUM COMPOUNDS; CRYSTAL DEFECTS; ELECTRON BEAMS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; FILM GROWTH; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

CALCIUM FLUORIDE; DEFECT DENSITY; ELECTRON BEAM EXPOSURE EFFECTS; ELECTRON MOBILITY; HETEROEPITAXY;

HETEROJUNCTIONS;

EID: 0030101958     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1701     Document Type: Article

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