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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 124, Issue 4, 1997, Pages 519-522

Low temperature growth of reactive partially ionized beam deposited AlN films

(3) Xie, Junqing a Mo, Qingwei a Feng, Jiayou a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BEAMS; LOW TEMPERATURE OPERATIONS; NITRIDES; QUARTZ; SILICON; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ACCELERATION VOLTAGE; ALUMINUM NITRIDE; REACTIVE PARTIALLY IONIZED BEAMS;

THIN FILMS;

EID: 0031140379 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(97)00096-7 Document Type: Article

Times cited : (3)

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