Effect of oxygen ion energy and annealing in formation of tin oxide thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 A, 1997, Pages 2281-2287

  Song, Seok Kyun ^a   Choi, Won Kook ^a   Cho, Jun Sik ^a   Jung, Hyung Jin ^a   Choi, Dongsoo ^b   Lee, Jeong Yong ^c   Baik, Hong Koo ^d   Koh, Seok Keun ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea Gas Corporation   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d Yonsei University   (South Korea)

Author keywords

Composition ratio; Crystallinity; Oxidation state of tin; Oxygen adsorption; Oxygen ion assisted deposition; Porosity; SnOx

Indexed keywords

ION ASSISTED DEPOSITION; OXYGEN ION ENERGY; PREFERENTIAL ORIENTATION; TIN OXIDE THIN FILMS;

ANNEALING; BINDING ENERGY; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; DEPOSITION; ION BEAMS; OXYGEN; POROSITY; REFRACTIVE INDEX; SEMICONDUCTING TIN COMPOUNDS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0031125782     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2281     Document Type: Article

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