Simulation of irradiation-induced surface effects in silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 388, Issue 3, 1997, Pages 308-313

  Wunstorf, R ^a   Rohe, T ^a   Rolf, A ^a  

^a TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC FIELDS; IONIZATION; IRRADIATION; MOS DEVICES; RADIATION EFFECTS; SILICON; SURFACES;

SILICON DETECTORS; SURFACE EFFECTS;

RADIATION DETECTORS;

EID: 0031125519     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)01243-0     Document Type: Article

References (7)

1. R. Wunstorf et al., Nucl. Instr. and Meth. A 377 (1996) 290.
2. E.H. Nicollian and J.R. Brews, MOS Physics and Technology (Wiley, 1982).
3. 2-Si Interface, in: Semiconductor Silicon - Material Science and Technology, eds. G. Harbeke and M. Schulz (Springer, 1989) pp. 221-222.
4. H. Gajewski et al., ToSCA User's Guide, Institut für angewandte Analysis und Stochastik. Berlin, Germany; for applications of ToSCA on silicon detectors, see: A. Bischoff et al., Nucl. Instr. and Meth. A 326 (1993) 27.
5. H. Gajewski et al., ToSCA User's Guide, Institut für angewandte Analysis und Stochastik. Berlin, Germany; for applications of ToSCA on silicon detectors, see: A. Bischoff et al., Nucl. Instr. and Meth. A 326 (1993) 27.
6. R. Wunstorf, Ph.D. thesis, Universität Hamburg, DESY FH1K-92-01 (1992).
7. R.H. Richter et al., Nucl. Instr. and Meth. A 377 (1996) 412.