A new method for the growth of silicon oxide layers below 300°C by use of catalytic activity of platinum overlayers

Applied Surface Science

Volumn 108, Issue 4, 1997, Pages 433-438

  Kobayashi, H ^a   Yamashita, Y ^a   Namba, K ^a   Todokoro, Y ^b  

^a OSAKA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST ACTIVITY; FILM GROWTH; HEAT TREATMENT; OXIDES; PLATINUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

PLATINUM OVERLAYERS; SILICON OXIDE;

THIN FILMS;

EID: 0031124714     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00689-7     Document Type: Article

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