Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces

Surface Science

Volumn 377-379, Issue , 1997, Pages 895-898

  Cirlin, G E ^a   Petrov, V N ^a   Golubok, A O ^a   Tipissev, S Ya ^a   Dubrovskii, V G ^a   Guryanov, G M ^a   Ledentsov, N N ^b,c   Bimberg, D ^b  

^a INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Gallium arsenide; Indium arsenide; Molecular beam epitaxy; Scanning tunneling microscopy; Self assembly; Surface structure, morphology, roughness and topography; Vicinal single crystal surfaces

Indexed keywords

ARRAYS; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SURFACE ROUGHNESS;

INDIUM ARSENIDE; SURFACE TOPOGRAPHY; VICINAL SURFACES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031124102     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01517-8     Document Type: Article

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