An appraisal of the one-flux method for treating carrier transport in modern semiconductor devices

Solid-State Electronics

Volumn 39, Issue 6, 1996, Pages 827-832

  Vaidyanathan, M ^a   Pulfrey, D L ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; BOUNDARY CONDITIONS; CHARGE CARRIERS; DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; ELECTROMAGNETIC WAVE ABSORPTION; ELECTROMAGNETIC WAVE BACKSCATTERING; ELECTRON TRANSPORT PROPERTIES; EQUATIONS OF MOTION; NUMERICAL METHODS;

BACKSCATTERING COEFFICIENTS; CARRIER MOBILITY; CONTINUITY EQUATIONS; DRIFT DIFFUSION EQUATIONS; ONE FLUX METHOD;

SEMICONDUCTOR DEVICES;

EID: 0030171546     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00273-1     Document Type: Article

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