Resistive-fuse network for early vision using resonant tunnelling diodes and HEMTs on an InP substrate

Electronics Letters

Volumn 33, Issue 8, 1997, Pages 722-723

  Maezawa, K ^a   Yamamoto, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Resonant tunnelling devices

Indexed keywords

ELECTRON TUNNELING; HIGH ELECTRON MOBILITY TRANSISTORS; IMAGE RECONSTRUCTION; RESONANT CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DIODES; SUBSTRATES;

RESONANT TUNNELING DIODE; RESONANT TUNNELING RESISTIVE FUSE CIRCUIT;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031123119     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970475     Document Type: Article

References (4)

1. HARRIS, J., KOCH, C., LUO, J., and WYATT, J.: 'Resistive fuses: Analog hardware for detecting discontinuities in early vision', in 'Analog VLSI implementation of neural systems' (Kluwer Academic, 1989)
2. LEVY, H.J., COLLINS, D.A., and MCGILL, T.C.: 'Extracting discontinuities in early vision with networks of resonant tunnelling diodes'. Proc. 1992 IEEE Int. Symp. Circuits and Systems, pp. 2041-2044
3. MAEZAWA, K.: 'Effects of simulated annealing in the resonant tunnelling resistive-fuse network for early vision', IEICE Trans. Electron., 1996, 79-C, pp. 1543-1549
4. CHEN, K.J., MAEZAWA, K., and YAMAMOTO, M.: 'Novel current-voltage characteristics in an InP-based resonant-tunnelling high electron mobility transistor', Appl. Phys. Lett., 1995, 67, pp. 3608-3610