Diamond layers on silicon: Feasibility of interface assessment by infrared and raman spectroscopies

Physica Status Solidi (A) Applied Research

Volumn 154, Issue 1, 1996, Pages 269-282

  Werninghaus, T ^a   Friedrich, M ^a   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SILICON CARBIDE; STRAIN;

LATERAL HOMOGENEITY; PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE INTERLAYERS; STRAIN DISTRIBUTION;

DIAMOND FILMS;

EID: 0030104388     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211540120     Document Type: Article

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