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Volumn 49, Issue 12, 1994, Pages 7974-7989

High-field transport statistics and impact excitation in semiconductors

(1)  Bringuier, E a  

a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords


EID: 6144236940     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.49.7974     Document Type: Article
Times cited : (44)

References (43)
  • 20
    • 84927321523 scopus 로고    scopus 로고
    • L. Reggiani, in Hot-electron Transport in Semiconductors, edited by L. Reggiani, Topics in Applied Physics Vol. 58 (Springer-Verlag, Berlin, 1985), p. 7.
  • 21
    • 84927321522 scopus 로고    scopus 로고
    • C. Canali, F. Nava, and L. Reggiani, in Hot-electron Transport in Semiconductors (Ref. 19), p. 87.
  • 22
    • 84927321521 scopus 로고    scopus 로고
    • W. Shockley, J. A. Copeland, and R. P. James, in Quantum Theory of Atoms, Molecules, and the Solid State, edited by P.-O. Löwdin (Academic, New York, 1966), p. 537.
  • 40
    • 84927321520 scopus 로고    scopus 로고
    • U. Rössler, in Intrinsic Properties of Group IV Elements and III-V, II-VI, and I-VII Compounds, edited by O. Madelung, Landolt-Börnstein, New Series, Group III, Vol. 22, Pt. A (Springer, Berlin, 1988), pp. 168-171.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.