Current oscillations and stable electric field domains in doped GaAs/AlAs superlattices

Semiconductor Science and Technology

Volumn 12, Issue 4, 1997, Pages 401-405

  Sun, Baoquan ^a   Jiang, Desheng ^a   Wang, Xiaojie ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC FIELDS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

CARRIER INJECTION MODEL; CONTACT RESISTANCE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031119745     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/4/010     Document Type: Article

References (13)

1. Esaki L and Chang L L 1974 Phys. Rev. Lett. 33 495
2. Capasso F, Mohammad K and Cho A Y 1986 Appl. Phys. Lett. 48 478
3. Choi K K, Levine B F, Malik R J, Walker J and Bethea CG 1987 Phys. Rev. B 35 4172
4. Zhang Y H, Yang X P, Liu W, Zhang P H and Jiang D S 1994 Appl. Phys. Lett. 65 1148
5. Bonilla L L, Galan J, Cuesta J A, Martinez F C and Molera J M 1994 Phys. Rev. B 50 8644
6. Bulashenko O M and Bonilla L L 1995 Phys. Rev. B 52 7849
7. Merlin R, Kwok S H, Norris T B, Grahn H T, Ploog K, Bonilla L L, Galan J, Cuesta J A, Martinez F C and Moleara J 1995 Proc. 22nd Int. Conf. on the Physics of Semiconductors ed D J Lockwood (Singapore: World Scientific) p 1039
8. Grahn H T, Kastrup J, Ploog K, Bonilla L L, Galan J, Kindelan M and Moscoso M 1995 Japan. J. Appl. Phys. 34 4526
9. Kastrup J, Klann R, Grahn H T, Ploog K, Bonilla L L, Galan J, Kindelan M, Moscoso M and Merlin R 1995 Phys. Rev. B 52 13 761
10. Schwarz G, Wacker A, Prengel F, Shöll E, Kastrup J, Grahn H T and Ploog K 1996 Semicond. SCI. Technol. 11 475
11. Bourgoin JC 1990 in Physics of DX Centers in GaAs Alloys (Sci-Tech Publications) pp 181-94
12. Mendez E E and Chang L L 1990 Surf. SCI. 229 173
13. Zhang Y H, Robert K, Grahn H T and Ploog K Superlatt. Microstruct. at press