The influence of imperfections and weak disorder on domain formation in superlattices

Semiconductor Science and Technology

Volumn 11, Issue 4, 1996, Pages 475-482

  Schwarz, G ^a   Wacker, A ^a   Prengel, F ^a   Scholl E ^a   Kastrup, J ^b   Grahn, H T ^b   Ploog, K ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; ELECTRIC VARIABLES MEASUREMENT; MATHEMATICAL MODELS; MICROSCOPIC EXAMINATION; OSCILLATIONS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; STATISTICAL METHODS;

HOMOGENOUS FIELD DISTRIBUTION; QUANTUM MECHANICAL TREATMENT; SUPERLATTICE STRUCTURE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030129612     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/4/003     Document Type: Article

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