Film stress measurements for high temperature micromechanical and microelectronical applications based on SiC

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 171-175

  Gottfried, K ^a   Kriz, J ^a   Werninghaus, T ^a   Thumer M ^a   Kaufmann, Ch ^a   Zahn, D R T ^a   Gessner T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Film stress measurements; High temperature micromechanical applications; Microelectronical applications; SiC layers

Indexed keywords

HIGH TEMPERATURE APPLICATIONS; METALLIZING; RAMAN SPECTROSCOPY; SILICON CARBIDE; STRESS ANALYSIS; THERMAL EFFECTS;

BENDING PLATE METHOD; MICROELECTRONICAL APPLICATIONS; MICROMECHANICAL APPLICATIONS;

SEMICONDUCTING FILMS;

EID: 0031119657     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01957-5     Document Type: Article

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