Characterization of F2 treatment effects on Si(100) surface and Si(100)/SiO2 interface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 SUPPL. B, 1997, Pages 2460-2463

  Kanashima, Takeshi ^a   Kurioka, Yoshiaki ^a   Imai, Takaaki ^a   Yamamoto, Hideaki ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

F2 treatment; Hydrogen terminated surface; Interface state density; IR RAS; Si(100) surface; Si F; Si H

Indexed keywords

INFRARED REFLECTION ABSORPTION SPECTROSCOPY (IR RAS);

ABSORPTION SPECTROSCOPY; DESORPTION; HYDROGEN; HYDROGEN BONDS; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); SILICA; SURFACE PROPERTIES; SURFACE TREATMENT;

SILICON WAFERS;

EID: 0031119357     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2460     Document Type: Article

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