Spinodal-like decomposition of InGaAsP (100) InP grown by gas source molecular beam epitaxy

Journal of Crystal Growth

Volumn 155, Issue 1-2, 1995, Pages 1-15

  LaPierre, R R ^a   Okada, T ^a   Robinson, B J ^a   Thompson, D A ^a   Weatherly, G C ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL STRUCTURE; DECOMPOSITION; DIFFUSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ADATOM; COMPOSITIONAL FLUCTUATION; GAS SOURCE MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIC PHOSPHIDE; SPINODAL-LIKE DECOMPOSITION;

SEMICONDUCTOR GROWTH;

EID: 0029388276     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00123-9     Document Type: Article

References (26)

1. Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation
2. Unstable Regions in III-V Quaternary Solid Solutions Composition Plane Calculated with Strictly Regular Solution Approximation
3. Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high-energy electron diffraction
4. LPE Growth and Luminescence of In1-xGaxPyAs1-yon (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤Eg≤1.893 eV