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Applied Physics A: Materials Science and Processing

Volumn 64, Issue 4, 1997, Pages 419-422

Physical mechanism of hydrogen deposition from a scanning tunneling microscopy tip

(2) Huang, D H a Yamamoto, Y a,b

a NTT CORPORATION (Japan)

b STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRON ENERGY LEVELS; EXTRACTION; GAS ADSORPTION; HYDROGEN; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE PHENOMENA; TUNGSTEN;

ELECTRONIC EXCITATION; HYDROGEN EXTRACTION; VOLTAGE PULSES;

DEPOSITION;

EID: 0031118593 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390050499 Document Type: Article

Times cited : (10)

References (8)

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2
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6
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8
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- Pauling, L.¹

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