Monolithic integration of a GaAs MESFET with a resonant cavity LED using a buried oxide layer

IEEE Photonics Technology Letters

Volumn 9, Issue 2, 1997, Pages 194-196

  Wheeler, Chuck ^a,d   Daryanani, Sonu ^b   Mathine, David L ^a   Maracas, George N ^c,d   Allee, David R ^a,d  

^a ARIZONA STATE UNIVERSITY   (United States)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^c MOTOROLA INC   (United States)

^d IEEE   (United States)

Author keywords

Integrated optoelectronics; Light emitting diodes

Indexed keywords

CAVITY RESONATORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; INTEGRATED OPTOELECTRONICS; LIGHT EMITTING DIODES; MIRRORS; MONOLITHIC INTEGRATED CIRCUITS; OXIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR INSULATOR BOUNDARIES; THERMOOXIDATION;

ALUMINUM ARSENIDE; ELECTRON BEAM EVAPORATION; RESONANT CAVITY LIGHT EMITTING DIODES (RCLED);

MESFET DEVICES;

EID: 0031075729     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.553089     Document Type: Article

References (8)

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