Heat generation in Si bipolar power devices: The relative importance of various contributions

Solid-State Electronics

Volumn 39, Issue 10, 1996, Pages 1463-1471

  Tornblad, O ^a   Lindefelt, U ^b   Breitholtz, B ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC POWER GENERATION; ELECTRON SCATTERING; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; STATISTICAL METHODS; TEMPERATURE; TEMPERATURE DISTRIBUTION;

BIPOLAR POWER DEVICES; DRIFT DIFFUSION APPROXIMATION; HEAT GENERATION; JOULE HEAT; MAXWELL-BOLTZMAN EQUATION; STRONGLY TIME DEPENDENT PROCESSES;

SEMICONDUCTOR DEVICES;

EID: 0030268852     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00056-1     Document Type: Review

References (10)

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