Room temperature lasing at lower-order subband of self-formed InGaAs quantum dot lasers with multi-stacked dot layer

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1996, Pages 43-44

  Shoji, H ^a   Nakata, Y ^a   Mukai, K ^a   Sugiyama, Y ^a   Sugawara, M ^a   Yokoyama, N ^a   Ishikawa, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS;

LASER OSCILLATION; QUANTUM DOT LASERS; STRANSKI-KRASTONOW MODE;

SEMICONDUCTOR LASERS;

EID: 0030399315     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)