Coulomb enhancement CdZnSe single quantum well lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3001, Issue , 1997, Pages 106-116

  Hsu, Chia Fu ^a   Zory, Peter S ^a   Rees, Paul C T ^b   Haase, Michael A ^c  

^a University of Florida   (United States)

^b BANGOR UNIVERSITY   (United Kingdom)

^c 3M COMPANY   (United States)

Author keywords

Bandgap renormalization; Carrier scattering; Cavity length; Coulomb enhancement; Excitonic gain; Gain; II VI; Lasing energy; Quantum well laser; Wavelength

Indexed keywords

CIVIL AVIATION; ELECTRIC CONDUCTIVITY; ELECTRON SCATTERING; ENERGY GAP; HETEROJUNCTIONS; LASERS; PROGRAMMING THEORY; SCATTERING; SEMICONDUCTING INDIUM; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; VEGETATION; BAND STRUCTURE; CHARGE CARRIERS; SEMICONDUCTING CADMIUM COMPOUNDS;

BANDGAP RENORMALIZATION; CARRIER SCATTERING; CAVITY LENGTH; COULOMB ENHANCEMENT; EXCITONIC GAIN; GAIN; II-VI; LASING ENERGY; QUANTUM WELL LASER; WAVELENGTH; CADMIUM ZINC TELLURIDE; SINGLE QUANTUM WELLS;

QUANTUM WELL LASERS; SEMICONDUCTOR LASERS;

EID: 0031372772     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273778     Document Type: Conference Paper

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