Using synchrotron radiation x-ray multiple diffraction to examine the lattice coherency of semiconductor surfaces and epitaxial layers

Journal of Applied Physics

Volumn 79, Issue 7, 1996, Pages 3492-3498

  Sasaki, J M ^a,f   Cardoso, L P ^a   Campos, C ^a,b   Roberts, K J ^c,d   Clark, G F ^d   Pantos, E ^d   Sacilotti, M A ^e  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^c HERIOT WATT UNIVERSITY   (United Kingdom)

^d DARESBURY LABORATORY   (United Kingdom)

^e UNIVERSITÉ DE BOURGOGNE   (France)

^f FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL LATTICES; CRYSTAL SYMMETRY; DATA ACQUISITION; METALLORGANIC VAPOR PHASE EPITAXY; SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACES; SYNCHROTRON RADIATION;

EPILAYERED MATERIALS; LATTICE COHERENCY; PARALLEL BEAM GEOMETRY; RENNINGER SCANS; X RAY MULTIPLE DIFFRACTION;

X RAY CRYSTALLOGRAPHY;

EID: 0030125926     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361399     Document Type: Article

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