A novel cathode structure for a self-biased linear silicon drift detector

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 387, Issue 1-2, 1997, Pages 246-249

  Corsi, F ^a   De Venuto, D ^a   Gramegna, G ^a   Marzocca, C ^a  

^a POLITECNICO DI BARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRIC RESISTANCE MEASUREMENT; PARTIAL DIFFERENTIAL EQUATIONS; PHOTODETECTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; TEMPERATURE DISTRIBUTION;

POISSON'S EQUATION; SILICON DRIFT DETECTORS (SDD);

CATHODES;

EID: 0031099049     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)00999-0     Document Type: Article

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