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Volumn 424, Issue 1-2, 1997, Pages 153-157

The scanning microscope for semiconductor characterization: Photocurrent, photovoltage and electrolyte electroreflectance imaging at the n-MoSe2|I- interface

Author keywords

Electrolyte electroreflectance; n MoSe2|I ; Photocurrent; Photovoltage; Scanning microscope; Semiconductors

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; DEFECTS; ELECTROLYTES; IMAGING TECHNIQUES; IODINE; MICROSCOPES; MOLYBDENUM COMPOUNDS; REACTION KINETICS; SINGLE CRYSTALS; SURFACE STRUCTURE;

EID: 0031096521     PISSN: 15726657     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0728(96)04903-0     Document Type: Article
Times cited : (10)

References (20)
  • 2
    • 84913706027 scopus 로고
    • D.S. Ginley, A. Nozik, K. Amstrong, K. Honda, A. Fujishima and T. Sakata (Eds.), Electrochemical Society, Pennington, NJ
    • M. Tomkiewicz and W.M. Shen, in D.S. Ginley, A. Nozik, K. Amstrong, K. Honda, A. Fujishima and T. Sakata (Eds.), Proc. Symp. Photoelectrochemical Materials, Electrochemical Society, Pennington, NJ, 1988, p. 250.
    • (1988) Proc. Symp. Photoelectrochemical Materials , pp. 250
    • Tomkiewicz, M.1    Shen, W.M.2
  • 15
    • 0004038250 scopus 로고
    • Addison-Wesley, Reading, MA
    • E. Hecht and A. Zajac, Optics, Addison-Wesley, Reading, MA, 1990.
    • (1990) Optics
    • Hecht, E.1    Zajac, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.