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Volumn 424, Issue 1-2, 1997, Pages 153-157
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The scanning microscope for semiconductor characterization: Photocurrent, photovoltage and electrolyte electroreflectance imaging at the n-MoSe2|I- interface
a a,b b |
Author keywords
Electrolyte electroreflectance; n MoSe2|I ; Photocurrent; Photovoltage; Scanning microscope; Semiconductors
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Indexed keywords
CHARGE CARRIERS;
CHARGE TRANSFER;
DEFECTS;
ELECTROLYTES;
IMAGING TECHNIQUES;
IODINE;
MICROSCOPES;
MOLYBDENUM COMPOUNDS;
REACTION KINETICS;
SINGLE CRYSTALS;
SURFACE STRUCTURE;
ELECTROLYTE ELECTROREFLECTANCE IMAGING;
PHOTOCURRENT;
PHOTOVOLTAGE;
INTERFACES (MATERIALS);
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EID: 0031096521
PISSN: 15726657
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0728(96)04903-0 Document Type: Article |
Times cited : (10)
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References (20)
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