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Volumn E80-C, Issue 3, 1997, Pages 489-497

1200 Dots-per-lnch light emitting diode array fabricated by solid-phase zinc diffusion

Author keywords

1200 dpi led array; Diffusion depth; Emitted light power; Gaas0 ip02; Optical printer print head; Solid phase zn diffusion

Indexed keywords

ARRAYS; CARRIER CONCENTRATION; DIFFUSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR JUNCTIONS; ZINC;

EID: 0031095468     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.