Open tube zinc diffusion into GaAs0.8P0.2 using AlN and SiNx cap films

Journal of Applied Physics

Volumn 79, Issue 6, 1996, Pages 2995-3002

  Ogihara, M ^a   Taninaka, M ^a   Nakamura, Y ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006724412     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362652     Document Type: Article

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