A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1992, Pages 71-74

  Grider, D E ^a   Mactaggart, I R ^a   Nohava, J C ^a   Stronczer, J J ^a   Ruden, P P ^a   Nohava, T E ^a   Fulkerson, D ^a   Tetzlaff, D E ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL--RANDOM ACCESS; INTEGRATED CIRCUITS, LSI; SEMICONDUCTING INDIUM COMPOUNDS;

DELTA DOPING; STATIC RANDOM ACCESS MEMORY;

TRANSISTORS, FIELD EFFECT;

EID: 0026622611     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)