Low-temperature grown GaAs probe for ultrafast electrical signal measurement

Electronics Letters

Volumn 33, Issue 4, 1997, Pages 325-326

  Takeuchi, K ^a   Mizuhara, A ^a  

^a Teratec Corporation   (Japan)

Author keywords

Force measurement; High speed optical techniques; Scanning probe microscopy

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; PHOTOELECTRIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SENSORS;

PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH (PCSS); SCANNING FORCE MICROSCOPE (SFM);

PROBES;

EID: 0031078695     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970197     Document Type: Article

References (4)

1. TAKEUCHI, K., and MIZUHARA, A.: 'Scanning tunneling optoelectronic microscope with 2 ps time resolution'. Electron. Lett., 1996, 32, (18), pp. 1709-1711
2. HOU, A.S., HO, F., and BLOOM, D.M.: 'Picosecond electrical sampling using a scanning force microscope', Electron. Lett., 1992, 28, (25), pp. 2302-2303
3. GUPTA, S., FRANKEL, M.Y., VALDMANIS, J.A., WHITAKER, J.F., MOUROU, C.A., SMITH, F.W., and CALAWA, A.R.: 'Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures', Appl. Phys. Lett., 1991, 59, (25), pp. 3276-3278
4. ALBRECHT, T.R., AKAMINE, S., CARVER, T.E., and QUATE, C.F.: 'Microfabrication of cantilever styli for the atomic force microscope'. J. Vac. Sci. Technol., 1990, A8, pp. 3386-3396