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Volumn 32, Issue 18, 1996, Pages 1709-1711

Scanning tunnelling optoelectronic microscope with 2ps time resolution

Author keywords

Electro optical effects; High speed optical techniques; Scanning tunnelling spectroscopy

Indexed keywords

ELECTRIC FIELD MEASUREMENT; ELECTROCHEMICAL ELECTRODES; ELECTROOPTICAL EFFECTS; LOW TEMPERATURE PROPERTIES; MICROSCOPES; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SWITCHES;

EID: 0030217238     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961162     Document Type: Article
Times cited : (4)

References (6)
  • 1
    • 0001029773 scopus 로고
    • High-speed optical sampling measurement of electrical waveform using a scanning tunnelling microscope
    • TAKEUCHI, K., and KASAHARA, Y.: 'High-speed optical sampling measurement of electrical waveform using a scanning tunnelling microscope', Appl. Phys. Lett., 1993, 63, (26), pp. 3548-3549
    • (1993) Appl. Phys. Lett. , vol.63 , Issue.26 , pp. 3548-3549
    • Takeuchi, K.1    Kasahara, Y.2
  • 2
    • 0029325584 scopus 로고
    • Application of scanning tunnelling microscope to high-speed optical sampling measurement
    • TAKEUCHI, K., MIZUHARA, A., and KASAHARA, Y.: 'Application of scanning tunnelling microscope to high-speed optical sampling measurement', IEEE Trans. Instrumentation Measurement, 1995, 44, (3), pp. 815-818
    • (1995) IEEE Trans. Instrumentation Measurement , vol.44 , Issue.3 , pp. 815-818
    • Takeuchi, K.1    Mizuhara, A.2    Kasahara, Y.3
  • 3
    • 0027688776 scopus 로고
    • Picosecond resolution in scanning tunnelling microscopy
    • NUNES, G. Jr., and FREEMAN, M.R.: 'Picosecond resolution in scanning tunnelling microscopy', Science, 1993, 262. pp. 1029-1032
    • (1993) Science , vol.262 , pp. 1029-1032
    • Nunes Jr., G.1    Freeman, M.R.2
  • 6
    • 36449009034 scopus 로고
    • Electrical and structural properties of Be- And Si-doped low-temperature-grown GaAs
    • ATIQUE, N., HARMON, E.S., CHANG, J.C.P., WOODALL, J.M., MELLOCH, M.R., and OTSUKA, N.: 'Electrical and structural properties of Be- and Si-doped low-temperature-grown GaAs', J. Appl. Phys., 1995,77, (4), pp. 1471-1476
    • (1995) J. Appl. Phys. , vol.77 , Issue.4 , pp. 1471-1476
    • Atique, N.1    Harmon, E.S.2    Chang, J.C.P.3    Woodall, J.M.4    Melloch, M.R.5    Otsuka, N.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.