Local structure of Sn/Si(001) surface phases

Surface Science

Volumn 371, Issue 2-3, 1997, Pages 307-315

  Lyman, P F ^a   Bedzyk, M J ^a,b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Auger electron spectroscopy; Low index single cristal surfaces; Photon absorption spectroscopy; Silicon; Surface relaxation and reconstruction; Surface structure, morphology, roughness and topography; Tin; X ray scattering, diffraction and reflection

Indexed keywords

ABSORPTION SPECTROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTROMAGNETIC WAVE DIFFRACTION; ELECTROMAGNETIC WAVE REFLECTION; ELECTROMAGNETIC WAVE SCATTERING; MORPHOLOGY; PHOTONS; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACE ROUGHNESS; TIN;

BRAGG REFLECTION; LOW INDEX SINGLE CRYSTAL SURFACES; PHOTON ABSORPTION SPECTROSCOPY; SURFACE RECONSTRUCTION; SURFACE RELAXATION; SURFACE TOPOGRAPHY; X RAY STANDING WAVE TECHNIQUE;

INTERFACES (MATERIALS);

EID: 0031078308     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01007-2     Document Type: Article

References (37)

1. D.H. Rich, T. Miller, A. Samsavar, H.F. Lin and T.-C. Chiang, Phys. Rev. B 37 (1988) 10 221.
2. G. Le Lay and K. Hricovini, Phys. Rev. Lett. 65 (1990) 807.
3. C.L. Griffiths, H.T. Anyele, C.C. Matthai, A.A. Cafolla and R.H. Williams, J. Vac. Sci. Technol. B 11 (1993) 1559.
4. W. Dondl, G. Lütjering, W. Wegscheider, J. Wilhelm, R. Schorer and G. Abstreiter, J. Cryst. Growth 127 (1993) 440.
5. X.W. Lin, Z. Liliental-Weber, J. Washburn, E.R. Weber, A. Sasaki, A. Wakahara and T. Hasegawa, Phys. Rev. B 52 (1995) 16581; J. Vac. Sci. Technol. B (1995) 1805.
6. X.W. Lin, Z. Liliental-Weber, J. Washburn, E.R. Weber, A. Sasaki, A. Wakahara and T. Hasegawa, Phys. Rev. B 52 (1995) 16581; J. Vac. Sci. Technol. B (1995) 1805.
7. P.R. Pukite, A. Harwit and S.S. Iyer, Appl. Phys. Lett. 54 (1989) 2142.
8. H. Höchst, M.A. Engelhardt and I. Hernández-Calderón, Phys. Rev. B 40 (1989) 9703.
9. W. Wegscheider, K. Eberl, U. Menczigar and G. Abstreiter, Appl. Phys. Lett. 57 (1990) 875; W. Wegscheider et al., J. Cryst. Growth 123 (1992) 75.
10. W. Wegscheider, K. Eberl, U. Menczigar and G. Abstreiter, Appl. Phys. Lett. 57 (1990) 875; W. Wegscheider et al., J. Cryst. Growth 123 (1992) 75.
11. H.-J. Gossmann, J. Appl. Phys. 68 (1990) 2791.
12. D.W. Jenkins and J.D. Dow, Phys. Rev. B 36 (1987) 7994.
13. T. Brudevoll, D.S. Citrin, N.E. Christensen and M. Cardona, Phys. Rev. B 48 (1993) 17128.
14. M. Zinke-Allmang, H.-J. Gossmann, L.C. Feldman and G.J. Fisanick, J. Vac. Sci. Technol. A 5 (1987) 2030.
15. N. Kuwata, T. Asai, K. Kimura and M. Mannami, Surf. Sci. 143 (1984) L393.
16. K. Ueda, K. Kinoshita and M. Mannami, Surf. Sci. 145 (1984) 261.
17. A.A. Baski, C.F. Quate and J. Nogami, Phys. Rev. B 44 (1991) 11 167.
18. J. Zegenhagen, Surf. Sci. Rep. 18 (1993) 199.
19. A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. 133 (1986) 666.
20. Our AES results have a relative uncertainty from measurement to measurement of ~10%. However, the absolute calibration of our AES scale to the actual coverage scale, making no reference to LEED superstructures, is >20%. This uncertainty arises principally from uncertainties of the energy-dependent mean free path of the Auger electrons. Thus, we are unable to confirm or disprove Ueda's coverage assignments [14].
21. B.W. Batterman and H. Cole, Rev. Mod. Phys. 36 (1964) 681.
22. M.J. Bedzyk and G. Materlik, Phys. Rev. B 31 (1985) 4110.
23. The [022] diffraction vector is inclined 45° from the surface normal and its projection onto the (001) plane lies 45° from the dimer rows of both domains of the two-domain surface. Thus, the two domains are equivalent with respect to this diffraction vector.
24. This situation is closely analogous to a forbidden reflection in conventional diffraction. The phase-weighted sum of fluorescent sites vanishes (similar to a structure factor of zero).
25. E. Fontes, J.R. Patel and F. Comin, Phys. Rev. Lett. 70 (1993) 2790.
26. M.W. Grant, D.J. Dieleman, M.A. Boshart and L.E. Seiberling, Phys. Rev. B 49 (1994) 16 534.
27. Note that if the subsurface Si atoms are in bulk-like positions, then the dimer buckling would imply that the "up" Sn atoms would have a substantially longer bond length to the underlying Si atoms than would the "down" Sn atoms. We expect that the subsurface Si atoms will be distorted away from bulk-like sites to minimize this disparity. Since the direction of the dimer buckling alternates along a dimer row (Fig. 2), a displacement of a Si atom towards an "up" Sn atom will also serve to move it away from a "down" Sn atom. An in-plane displacement of ∼0.25 Å would be sufficient to bring all Sn-Si bond lengths to a value close to the sum of the covalent radii.
28. For purposes of this calculation, we assume that C = 1 and use a Debye-Waller factor of 0.85, consistent with previous measurements of dimerized adatoms on the Si(001) surface. For details, see Y. Qian, P.F. Lyman and M.J. Bedzyk, Scanning Microsc. 9 (1995) 969.
29. R.G. Zhao, J.F. Jia and W.S. Yang, Surf. Sci. 274 (1992) L519.
30. Y. Zhang, R.G. Zhao and W.S. Wang, Surf. Sci. 293 (1993) L821.
31. L. Seehofer, G. Falkenberg, R. Rettig and R.L. Johnson, J. Phys. (Paris) IV 4 (1994) C9-97.
32. W.S. Yang, X.-D. Wang, K. Cho, J. Kishimoto, T. Hashizume and T. Sakurai, Surf. Sci. 310 (1994) L625; Phys. Rev. B 51 (1995) 7571.
33. W.S. Yang, X.-D. Wang, K. Cho, J. Kishimoto, T. Hashizume and T. Sakurai, Surf. Sci. 310 (1994) L625; Phys. Rev. B 51 (1995) 7571.
34. I. Andriamanantenasoa, J.P. Lacharme and C.A, Sébenne, Surf. Svi. 189/190 (1987) 563.
35. D.T. Wang, N. Esser, M. Cardona and J. Zegenhagen, Surf. Sci. 343 (1995) 31.
36. D. Walton, J. Chem. Phys. 37 (1962) 2182. Surface Science 371 (1997) 316-320
37. D. Walton, J. Chem. Phys. 37 (1962) 2182. Surface Science 371 (1997) 316-320