Interfacial reaction and electrical property of Ge/Ni/ZnSe for blue laser diode

Journal of Electronic Materials

Volumn 26, Issue 2, 1997, Pages 83-89

  Kim, Dae Woo ^a   Kwak, Joon Seop ^a   Park, Hee Soo ^a   Kim, Hwa Nyun ^a   Baik, Hong Koo ^a   Lee, Sung Man ^b   Kim, Chang Soo ^c   Noh, Sam Kyu ^c  

^a Yonsei University   (South Korea)

^b Kangwon National University   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Ge Ni ZnSe; Ni ZnSe; Ni3Se2; Schottky barrier height; ZnSe

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; INTERFACES (MATERIALS); OHMIC CONTACTS; PYROLYSIS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CAPACITANCE VOLTAGE MEASUREMENT; SCHOTTKY BARRIER HEIGHT;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031076609     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0093-9     Document Type: Article

References (20)

1. Akira Ishibashi and Yoshifumi Mori, J. Cryst. Growth 138, 677 (1994).
2. I. Suemune, H. Masato, K. Nakanishi, Y. Kuroda and M. Yamanish, J. Cryst. Growth 107, 679 (1991).
3. M.A. Haase, J. Qiu, J.M. DePuydt and H. Cheng, Appl. Phys. Lett. 59, 1272 (1991).
4. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdiov and M. Burns, J. Appl. Phys. 76 (3), 1363 (1994).
5. Robert F. Davis, G. Keiner, M. Shur, J.W. Dalmour and J.A. Edmond, Proc. IEEE 79 (5), 677 (1991).
6. Y. Fan and J. Han, Appl. Phys. Lett. 61, 3160 (1992).
7. Y. Lansari and J. Ren, Appl. Phys. Lett. 61, 2554 (1992).
8. Y. Fan and J. Han, J. Electron. Mater. 24 (3), 13 (1995).
9. P.M. Mensz, Appl. Phys. Lett. 64, 2148 (1994).
10. J.S. Kwak, J.Y. Shim and H.K. Baik, J. Electron. Mater. 23 (12), 1335 (1994).
11. E.D. Marshall, B. Zhang, L.C. Wang, P.F. Jino, W.X. Chen, T. Sawada, S.S. Lau, K.L. Kavanagh and T.F. Kuech, J. Appl. Phys. 62 (3), 942 (1987).
12. L.C. Wang, S.S. Lau, E.K. Hsieh and J.B. Velebir,Appl. Phys. Lett. 54, 2677 (1989).
13. K.W. Boer, Survey of Semiconductor Physics, 2nd ed, (New York: Van Nortrand Reinhold, 1992).
14. S.P. Muraka, Suicides for VLSI Applications, (New York: Academic, 1983).
15. Kiwamu Tanahashi, H.J. Takata, A. Otuki and M. Murakami, J. Appl. Phys. 72 (9), 4183 (1992).
16. F.R. de Boer and R. Boom, Cohesion in Metals, (Holland: Elsevier, North-Holland Science, 1988).
17. Y.X. Liu, M.W. Wang, J.O. McCaldin and T.C. McGill, J. Vac. Sci. Technol. B 10 (4), 2072 (1992).
18. Kazuhoro Mochizuk, Akihisa Terano, Masayuki Momose, Akira Taike and Shinichi Nakatsuka, Appl. Phys. Lett. 67 (1), 112 (1995).
19. M. Ukita and F. Hiei, Appl. Phys. Lett. 66, 209 (1995).
20. J.D. Guo, F.M. Pan, M.S. Feng, R.J. Guo, P.F. Chou and C.Y. Chang, J. Appl. Phys. 80, 1623 (1996).