MOCVD-grown, pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn , Issue , 1996, Pages 169-170

  Kurtz, S R ^a   Biefeld, R M ^a   Allerman, A A ^a   Howard, A J ^a   Crawford, M H ^a   Pelczynski, M W ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CRYSTAL LATTICES; ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; INFRARED RADIATION; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; X RAY CRYSTALLOGRAPHY;

ALUMINUM ARSENIDE ANTIMONY CLADDINGS; INDIUM ARSENIDE; MIDWAVE INFRARED LASERS; MULTIPLE QUANTUM WELL INJECTION LASER;

SEMICONDUCTOR LASERS;

EID: 0029718207     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)