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Volumn 32, Issue 2, 1997, Pages 215-221

A high-speed, low-power bipolar digital circuit for Gb/s LSI's: Current mirror control logic

Author keywords

Bipolar; CMCL; Current mirror; Digital; High speed; Low power; Low voltage

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; ELECTRIC CURRENT CONTROL; ELECTRIC LOSSES; EMITTER COUPLED LOGIC CIRCUITS; GATES (TRANSISTOR); VOLTAGE CONTROL;

EID: 0031075777     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.551913     Document Type: Article
Times cited : (19)

References (14)
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    • Proc. of BCTM , vol.1993 , pp. 236-239
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  • 3
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    • Low-power design methodology for Gbit/sec bipolar LSI's
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    • (1995) Proc. BCTM , pp. 106-109
    • Koike, K.1    Kawai, K.2    Kobayashi, Y.3    Ichino, H.4
  • 4
    • 5244337290 scopus 로고
    • An extremely low-power bipolar current-mode I/O circuit for multi-Gbit/s interfaces
    • K. Kawamura, M. Suzuki, and H. Ichino, "An extremely low-power bipolar current-mode I/O circuit for multi-Gbit/s interfaces," in Symp. VLSI Circuits, 1993, pp. 236-239.
    • (1993) Symp. VLSI Circuits , pp. 236-239
    • Kawamura, K.1    Suzuki, M.2    Ichino, H.3
  • 6
    • 0029255547 scopus 로고
    • 1.65 Gb/s 60 mW 4:1 multiplexer and 1.8 Gb/s 80 mW 1:4 demultiplexer IC's using 2 V 3-Level series-gating ECL circuits
    • T. Kuroda, T. Fujita, Y. Itabashi, S. Kabumoto, M. Noda, and A. Kanuma, "1.65 Gb/s 60 mW 4:1 multiplexer and 1.8 Gb/s 80 mW 1:4 demultiplexer IC's using 2 V 3-Level series-gating ECL circuits," Dig. Tech. Papers, ISSCC, 1995, pp. 36-37.
    • (1995) Dig. Tech. Papers, ISSCC , pp. 36-37
    • Kuroda, T.1    Fujita, T.2    Itabashi, Y.3    Kabumoto, S.4    Noda, M.5    Kanuma, A.6
  • 8
    • 0028385097 scopus 로고
    • Design techniques for low-voltage high-speed digital bipolar circuts
    • Mar.
    • B. Razavi, Y. Ota and R. G. Swarts, "Design techniques for low-voltage high-speed digital bipolar circuts," IEEE J. Solid-State Circuits, vol. 29, pp. 332-339, Mar. 1994.
    • (1994) IEEE J. Solid-State Circuits , vol.29 , pp. 332-339
    • Razavi, B.1    Ota, Y.2    Swarts, R.G.3
  • 10
    • 5244264281 scopus 로고
    • High speed regenerator-section terminator LSI operating up to 2.5 Gbit/s using .05 μm Si bipolar standard-cell technology
    • May
    • K. Kawai, K. Koike, H. Ichino, and Y. Kobayashi, "High speed regenerator-section terminator LSI operating up to 2.5 Gbit/s using .05 μm Si bipolar standard-cell technology," Electron. Lett., vol. 31, no. 10, pp. 791-792, May 1995.
    • (1995) Electron. Lett. , vol.31 , Issue.10 , pp. 791-792
    • Kawai, K.1    Koike, K.2    Ichino, H.3    Kobayashi, Y.4
  • 14
    • 0027802727 scopus 로고
    • A novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSI'S
    • T. Maeda, K. Numata, M. Tokushima, M. Ishikawa, M. Fukaishi, H. Hida, and Y. Ohno, "A novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSI'S," in Tech. Dig. GaAs IC Symp., 1993, pp. 75-78.
    • (1993) Tech. Dig. GaAs IC Symp. , pp. 75-78
    • Maeda, T.1    Numata, K.2    Tokushima, M.3    Ishikawa, M.4    Fukaishi, M.5    Hida, H.6    Ohno, Y.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.