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1
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5244336576
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25 ps/Gate GaAs standard cell LSI's using 0.5 m gate MESFET's
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M. Nemoto, Y. Ogawa, Y. Morita, S. Seki, Y. Kawakami, and M. Akiyama "25 ps/Gate GaAs standard cell LSI's using 0.5 m gate MESFET's," in Tech. Dig. GaAs IC Symp., 1992, pp. 93-96.
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Nemoto, M.1
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Kawakami, Y.5
Akiyama, M.6
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2
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0027853266
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A design methodology of bipolar standard cell LSI's for Gbit/s signal processing
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K. Koike, K. Kawai, and H. Ichino, "A design methodology of bipolar standard cell LSI's for Gbit/s signal processing," in Proc. of BCTM, 1993, pp. 236-239.
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Proc. of BCTM
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Koike, K.1
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3
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0029532441
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Low-power design methodology for Gbit/sec bipolar LSI's
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K. Koike, K. Kawai, Y. Kobayashi, and H. Ichino, "Low-power design methodology for Gbit/sec bipolar LSI's," in Proc. BCTM, 1995, pp. 106-109.
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Koike, K.1
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Ichino, H.4
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4
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5244337290
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An extremely low-power bipolar current-mode I/O circuit for multi-Gbit/s interfaces
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K. Kawamura, M. Suzuki, and H. Ichino, "An extremely low-power bipolar current-mode I/O circuit for multi-Gbit/s interfaces," in Symp. VLSI Circuits, 1993, pp. 236-239.
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Symp. VLSI Circuits
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Kawamura, K.1
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Ichino, H.3
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5
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85027161301
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A sub-50 psec.89 K gate ECL-gate array with 480 Kb BiCMOS STRAM
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S. Tago, N. Matsumoto, H. Kaga, T. Ogawa, S. Ohkawa, and M. Kobayashi, "A sub-50 psec.89 K gate ECL-gate array with 480 Kb BiCMOS STRAM," in Proc. 6th Annual IEEE Int. ASIC Conf. Exhibit, 1993, pp. 174-177.
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Proc. 6th Annual IEEE Int. ASIC Conf. Exhibit
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Tago, S.1
Matsumoto, N.2
Kaga, H.3
Ogawa, T.4
Ohkawa, S.5
Kobayashi, M.6
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6
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0029255547
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1.65 Gb/s 60 mW 4:1 multiplexer and 1.8 Gb/s 80 mW 1:4 demultiplexer IC's using 2 V 3-Level series-gating ECL circuits
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T. Kuroda, T. Fujita, Y. Itabashi, S. Kabumoto, M. Noda, and A. Kanuma, "1.65 Gb/s 60 mW 4:1 multiplexer and 1.8 Gb/s 80 mW 1:4 demultiplexer IC's using 2 V 3-Level series-gating ECL circuits," Dig. Tech. Papers, ISSCC, 1995, pp. 36-37.
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Kuroda, T.1
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8
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0028385097
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Design techniques for low-voltage high-speed digital bipolar circuts
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Mar.
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B. Razavi, Y. Ota and R. G. Swarts, "Design techniques for low-voltage high-speed digital bipolar circuts," IEEE J. Solid-State Circuits, vol. 29, pp. 332-339, Mar. 1994.
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Razavi, B.1
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Swarts, R.G.3
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9
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0027873599
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A 0.5 μm bipolar technology using a new base formation method
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C. Yamaguchi, Y. Kobayashi, M. Miyake, K. Ishii, and H. Ichino, "A 0.5 μm bipolar technology using a new base formation method," Proc. BCTM, 1993, pp. 63-66.
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Yamaguchi, C.1
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10
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5244264281
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High speed regenerator-section terminator LSI operating up to 2.5 Gbit/s using .05 μm Si bipolar standard-cell technology
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May
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K. Kawai, K. Koike, H. Ichino, and Y. Kobayashi, "High speed regenerator-section terminator LSI operating up to 2.5 Gbit/s using .05 μm Si bipolar standard-cell technology," Electron. Lett., vol. 31, no. 10, pp. 791-792, May 1995.
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Kawai, K.1
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11
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5244244943
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A low-power static frequency divider circuit in bipolar technology
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K. Y. Toh, Y. C. Tzeng, J. D. Warnock, E. J. Petrollo, K. C. T. Chuang, and J. Y. C. Sun, "A low-power static frequency divider circuit in bipolar technology," in Proc. BCTM, 1992, pp. 163-165.
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Toh, K.Y.1
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12
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5244262918
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GaAs standard cell LSI's
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Sept. in Japanese
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Y. Ogawa, M. Nemoto, S. Seki, and Y. Kawakami, "GaAs standard cell LSI's," in Proc. Nat. Conf. (Rec.) IEICE Japan, vol. SC-6-2, Sept. 1993, pp. 5-187 (in Japanese).
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Ogawa, Y.1
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13
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0028749240
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A low-power voltage GHz MOS integrated circuit for mobile computing systems
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M. Yamashina, M. Mizuno, K. Furuta, H. Igura, M. Momura, H. Abiko, K. Okabe, A. Ono, and H. Yamada, "A low-power voltage GHz MOS integrated circuit for mobile computing systems," in Dig. Tech. Papers, IEEE Symp. Low Power Electronics, 1994, pp. 80-81.
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Yamashina, M.1
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Igura, H.4
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Abiko, H.6
Okabe, K.7
Ono, A.8
Yamada, H.9
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14
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0027802727
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A novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSI'S
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T. Maeda, K. Numata, M. Tokushima, M. Ishikawa, M. Fukaishi, H. Hida, and Y. Ohno, "A novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSI'S," in Tech. Dig. GaAs IC Symp., 1993, pp. 75-78.
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Maeda, T.1
Numata, K.2
Tokushima, M.3
Ishikawa, M.4
Fukaishi, M.5
Hida, H.6
Ohno, Y.7
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