Polarisation characteristics of InGaAlP/ AlGaAs visible vertical cavity surface emitting lasers

Electronics Letters

Volumn 32, Issue 6, 1996, Pages 559-560

  Chen, Y H ^a   Wilkinson, C I ^a   Woodhead, J ^a   Button, C C ^a   David, J P R ^a   Pate, M A ^a   Robson, P N ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Vertical cavity surface emitting lasers; Visible semiconductor lasers

Indexed keywords

CAVITY RESONATORS; ELECTRIC PROPERTIES; LIGHT POLARIZATION; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; SUBSTRATES; TEMPERATURE;

DISTRIBUTED BRAGG REFLECTORS; VERTICAL CAVITY SURFACE EMITTING LASER; VISIBLE SEMICONDUCTOR LASERS;

SEMICONDUCTOR LASERS;

EID: 3242861416     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960389     Document Type: Article

References (6)

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2. CHANG-HASNAIN, C.J., HARBISON, J.P., HASNAIN, G., VON LEHMEN, A.C., FLOREZ, L.T., and STOFFEL, N. G.: 'Dynamic, polarisation, and transverse mode characteristics of vertical cavity surface emitting lasers', IEEE J. Quantum Electron., 1991, 27, pp. 1402-1409
3. NUMAI, T., KURIHARA, K., HN, K., KOSAKA, H., OGURA, I., KAJITA, M., SAITO, H., and KASAHARA, K.: 'Control of light-output polarization for surface-emitting laser type device by strained active layer grown on misoriented substrate', IEEE J. Quantum Electron., 1995, 31, pp. 636-642
4. CHOQUETTE, K.D., and LEIBENGUTH, R.E.: 'Control of vertical-cavity laser polarization with anisotropic transverse cavity geometries', IEEE Photonics Technol. Lett., 1994, 6, pp. 40-42
5. CHOQUETTE, K.D., SCHNEIDER, Jr., R.P., LEAR, K.L., and LEIBENGUTH, K.E.: 'Gain-dependent polarisation properties of vertical-cavity lasers', IEEE J. Sel. Topics Quantum Electron., 1995, 1, pp. 661-666
6. 2 vertical cavity surface-emitting lasers', Electron. Lett., 1995, 31, pp. 461-462