In situ TEM observations of surfactant-mediated epitaxy: Growth of Ge on an Si(111) surface mediated by In

Surface Science

Volumn 357-358, Issue , 1996, Pages 418-421

  Minoda, H ^a   Tanishiro, Y ^a   Yamamoto, N ^a   Yagi, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electron microscopy; Epitaxy; Germanium; Growth; Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GERMANIUM; GRAIN SIZE AND SHAPE; INDIUM; INTERFACES (MATERIALS); MORPHOLOGY; SILICON; SURFACE PHENOMENA; SURFACE ROUGHNESS; SURFACE STRUCTURE;

GERMANIUM ISLAND GROWN; SUBSTRATE CRYSTAL; SURFACTANT MEDIATED EPITAXY; THREE DIMENSIONAL ISLAND FORMATION; TOPOGRAPHY;

TRANSMISSION ELECTRON MICROSCOPY;

EID: 13544256736     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00191-4     Document Type: Article

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