SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 369, Issue 1-3, 1996, Pages 99-107

Comparisons of Ag deposits on Ge and Si(111)

(2) Metcalfe, F L a,c Venables, J A a,b

a UNIVERSITY OF SUSSEX (United Kingdom)

b ARIZONA STATE UNIVERSITY (United States)

c Unicam Analytical Ltd (United Kingdom)

Author keywords

Auger electron spectroscopy; Germanium; Growth; Metal semiconductor interfaces; Nucleation; Scanning electron microscopy (SEM); Silver; Surface diffusion

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; NUCLEATION; PARTICLE SIZE ANALYSIS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR METAL BOUNDARIES; SUBSTRATES; SURFACE STRUCTURE; THERMAL DIFFUSION IN SOLIDS;

BIASSED SECONDARY ELECTRON IMAGING; METAL SEMICONDUCTOR BOUNDARIES; ULTRAHIGH VACUUM SCANNING ELECTRON MICROSCOPY (UHVSEM);

SILVER;

EID: 0030382345 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(96)00878-3 Document Type: Article

Times cited : (20)

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