Process latitude enhancement for 3D structure formation in e-beam lithography

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 487-490

  Kudryashov, V A ^a   Krasnov, V V ^a   Prewett, P D ^b   Hall, T J ^c  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ETCHING; MULTILAYERS; POLYMETHYL METHACRYLATES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; THREE DIMENSIONAL;

COMPUTER GENERATED HOLOGRAMS; FRESNEL DIFFRACTIVE OPTICAL ELEMENTS; VISIBLE LIGHT WAVELENGTH;

ELECTRON BEAM LITHOGRAPHY;

EID: 0031074740     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00191-8     Document Type: Article

References (5)

1. A. Stemmer, H. Zarschiiky et al. Microelectr.Eng.27 (1995) 171-174.
2. W. Brunger, E.-B. Klay et al. Microelectr. Eng.27 (1995) 135-138.
3. Rishton S.S. Beaumont S.P. Wilkinson C.D.W. Proc. Microcercuit Eng. (1982), 314-318.
4. V.A. Kudryashov, T.B. Borzenko, V.V. Krasnov, V.V. Aristov. Microelctr. Eng.23 (1994) 307-310.
5. V.A. Kudryashov, V.V. Krasnov, P.D. Prewett, S.E. Huq, T.J. Hall Microel. Eng.30(1996) 305-308.