Low noise performance of dry etched InGaAs/InAlAs HEMT's in comparison with wet recessed devices

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 372-375

  Duran, H C ^a   Klepser, B U H ^a   Patrick, W ^a   Schefer, M ^a   Cheung, R ^a   Bachtold, W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

LATTICE MATCHING; NOISE SOURCE PARAMETERS; WET RECESSED DEVICES;

DRY ETCHING; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029721076     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)