Local-symmetry effect on light emissivity from SiGe quantum wells

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 204-207

  Miyao, M ^a   Nakagawa, K ^a   Kimura, Y ^a   Hirao, M ^a,b  

^a HITACHI LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Light emissivity; Local symmetry; Quantum wells; Silicon germanium

Indexed keywords

BAND STRUCTURE; CALCULATIONS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

CONDUCTION BAND; LIGHT EMISSIVITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031073163     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09224-3     Document Type: Article

References (6)

1. M. Miyao and K. Nakagawa, Jpn. J. Appl. Phys., 33 (1994) 3791.
2. D.J. Robbins, P. Calcott and W.Y. Leong, Appl. Phys. Lett., 59 (1991) 1350.
3. S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida and K. Nakagawa, Jpn. J. Appl. Phys., 31 (1991) L1015.
4. M. Miyao, K. Nakagawa, H. Nakahara, Y. Kiyota and M. Kondo, Appl. Surf. Sci., 102 (1996) 360.
5. K. Nakagawa and M. Miyao, J. Appl. Phys., 69 (1991) 3058.
6. M. Hirao and T. Uda, in David J. Lockwood (ed.), Proc. 22nd Int. Conf. on the Physics of Semiconductors, World Scientific, Singapore, 1995, pp. 699-702.