Self-aligned TiN formation by N2 plasma bias treatment of TiSi2 deposited by selective chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 2, 1997, Pages 642-647

  Kamoshida, Kazuyoshi ^a   Saito, Kunio ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Deposition; Plasma processing; Selective CVD; Self aligned; Titanium nitride; Titanium silicide

Indexed keywords

TITANIUM SILICIDE;

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; ETCHING; MAGNETRON SPUTTERING; NITROGEN; PLASMA APPLICATIONS; PLASMA SOURCES; SEMICONDUCTING SILICON COMPOUNDS; THERMAL STRESS; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM NITRIDE;

EID: 0031072662     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.642     Document Type: Article

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