Metastable TiSixNyOz films of B1-type structure prepared by the arc process

Thin Solid Films

Volumn 279, Issue 1-2, 1996, Pages 75-81

  Kuznetsov, M V ^a   Shalaeva, E V ^a   Borisov, S V ^a   Mitrofanov, B V ^a   Ivanovsky, A L ^a  

^a INSTITUTE OF SOLID STATE CHEMISTRY   (Russian Federation)

Author keywords

Metal oxide semiconductor structure (mos); Silicon; Titanium nitride; Titanium oxide

Indexed keywords

CALCULATIONS; COMPOSITION; DEPOSITION; MOS DEVICES; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SYNTHESIS (CHEMICAL); TITANIUM NITRIDE; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ARC DEPOSITION; ELECTRON MICROPROBE ANALYSIS; METASTABLE TITANIUM SILICON NITRIDE FILMS; QUANTUM CHEMICAL CALCULATIONS;

THIN FILMS;

EID: 0030168980     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08144-5     Document Type: Article

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