Local strains in Si1-x-yGexCy alloys as deduced from vibrational frequencies

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 118-121

  Finkman, E ^a   Rucker H ^b   Meyer, F ^c   Prawer, S D ^d   Bouchier, D ^c   Boulmer, J ^c   Bodnar, S ^e   Regolini, J L ^e  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b IHP   (Germany)

^c UNIVERSITÉ PARIS SACLAY   (France)

^d UNIVERSITY OF MELBOURNE   (Australia)

^e ORANGE LABS   (France)

Author keywords

Raman scattering; Short range order; SiGeC alloys

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; LASER APPLICATIONS; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

PULSED LASER INDUCED EPITAXY; RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031071628     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09236-X     Document Type: Article

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