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Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 18-21

Real-time control of layer thickness in LPCVD Si/Si.88Ge.12 HBT structures

(5) Hope, D A O a Pickering, C a Carline, R T a Leong, W Y a Robbins, D J a

a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY (United Kingdom)

Author keywords

Chemical vapour deposition; Germanium; Layer thickness; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THICKNESS CONTROL;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031071120 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(96)09263-2 Document Type: Article

Times cited : (4)

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