Growth and crystallinity of ferroelectric BaMgF4 films on (111)-oriented Pt films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 2 SUPPL. B, 1997, Pages

  Aizawa, Koji ^a   Moriwaki, Masashi ^a   Ichiki, Tatsuya ^a   Tokumitsu, Eisuke ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

BaMgF4; Epitaxial growth; Ferroelectric; MFMIS structure; Pt(111) SiO2 Si(100)

Indexed keywords

BARIUM COMPOUNDS; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; FILM GROWTH; MAGNETRON SPUTTERING; METALLIC FILMS; MOLECULAR BEAM EPITAXY; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

FULL WIDTH AT HALF MAXIMUM (FWHM); METAL FERROELECTRIC SILICON FIELD EFFECT TRANSISTORS (MFSFETS); RADIO FREQUENCY (RF) MAGNETRON SPUTTERING;

FERROELECTRIC MATERIALS;

EID: 0031070131     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.L234     Document Type: Article

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