Low energy electron beam lithography: Pattern distortion by charge trapped in the resist

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 165-168

  Kudryashov, V A ^a   Krasnov, V V ^a   Prewett, P D ^b   Hall, T J ^c  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; IRRADIATION; MATHEMATICAL MODELS; PHOTORESISTS;

CHARGE TRAPPING; ELECTRON BEAM IRRADIATION; ELECTRON PENETRATION DEPTH; LOW VOLTAGE ELECTRON BEAM LITHOGRAPHY;

ELECTRON BEAM LITHOGRAPHY;

EID: 0031069486     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00082-2     Document Type: Article

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