Computational approach for the chemical sensitivity of oxide and sulphide semiconductor surfaces

Physica Scripta T

Volumn 69, Issue , 1997, Pages 259-263

  Rantala, Tuomo S ^a   Lantto, Vilho ^a  

^a UNIVERSITY OF OULU   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; CHEMICALS; COMPUTATIONAL METHODS; ELECTRIC FIELDS; ELECTRONIC DENSITY OF STATES; ELECTRONS; RELAXATION PROCESSES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; SENSITIVITY ANALYSIS;

ATOMIC RELAXATION; CADMIUM SULFIDE; CHEMICAL SENSITIVITY; ELECTRON ELECTRON INTERACTION; TIN DIOXIDE;

SURFACES;

EID: 0030835222     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/1997/t69/054     Document Type: Article

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