On the inversion in GaAs metal-insulator-semiconductor heterostructures

Applied Physics Letters

Volumn 70, Issue 2, 1997, Pages 228-230

  Chen, Zhi ^a   Mohammad, S Noor ^a,b   Park, Dae Gyu ^a   Morkoç, Hadis ^a,c   Chang, Yia Chung ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b School of Engineering   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CALCULATIONS; ELECTRONS; FERMI LEVEL; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SILICON NITRIDE;

CONDUCTION BAND; EFFECTIVE MASS APPROXIMATION; ELECTRON INVERSION; MODEL SOLID THEORY; VALENCE BAND;

SEMICONDUCTING SILICON;

EID: 0030824488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118374     Document Type: Article

References (8)

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