Forward transient charge injection in psn diodes at medium to high injection levels

IEEE Transactions on Electron Devices

Volumn 44, Issue 1, 1997, Pages 190-194

  Chudobiak, Michael J ^a   Walkey, David J ^b  

^a Avtech Electrosystems Ltd   (Canada)

^b CARLETON UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CARRIER CONCENTRATION; CHARGE CARRIERS; CURRENT DENSITY; DIFFERENTIAL EQUATIONS; ELECTRIC CURRENTS; LAPLACE TRANSFORMS; PULSE CIRCUITS; SEMICONDUCTOR DOPING;

FORWARD TRANSIENT CHARGE INJECTION; PULSED FORWARD BIASING; STEP RECOVERY RAMP VOLTAGE;

SEMICONDUCTOR DIODES;

EID: 0030816961     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.554810     Document Type: Article

References (9)

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