New principles of high power switching with semiconductor devices

Solid State Electronics

Volumn 32, Issue 11, 1989, Pages 923-930

  Grekhov, I V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

IONIZATION; PLASMAS--APPLICATIONS; TRANSISTORS;

DRIFT STEP RECOVERY DIODES (DSRD); HIGH POWER SWITCHING; IMPACT IONIZATION WAVE; REVERSELY SWITCHED DYNISTORS (RSD); REVERSLY CONTROLLED TRANSISTORS (RCT);

SEMICONDUCTOR DEVICES;

EID: 0024765323     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90152-4     Document Type: Article

References (14)

1. Experimental demonstration of high-power fast-rise-time switching in silicon junction semiconductors
2. Superpower switch of microsecond range
3. Power drift step recovery diodes (DSRD)
4. 1000-V, 300-ps pulse-generation circuit using silicon avalanche devices